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The FQPF20N65C is a 650V, 20A N-Channel enhancement-mode power MOSFET
Key Specifications
- Drain-Source Voltage (\(V_{DSS}\)): 650 V
- Continuous Drain Current (\(I_{D}\)): 20 A (\(a \text{ } T_C = 25^{\circ}C\))
- Drain-Source On-Resistance (\(R_{DS(on)}\)): 0.15 Ω (typical)
- Total Gate Charge (\(Q_{g}\)): 75 nC (typical)
- Operating Junction Temperature Range: -55 to +150 °C